基于功率MOS型场效应管的4 kV纳秒脉冲源

4 kV Nanosecond Pulser Using Metallic Oxide Semiconductor Field-Effect Transistor

摘要:

为了用固体开关器件替代国外氢闸流管,开展了大功率高速高压半导体固体开关及与其相配的高速高压组合电路研究。利用功率MOS型场效应管的开关原理,提出了对功率MOS型场效应管的栅极"过"驱动技术,提高了功率MOS型场效应管的开关速度,研制出基于功率MOS型场效应管的输出脉冲幅度大于4 kV,前沿小于10 ns,脉冲宽度大于100 ns的高压快脉冲驱动源。

Abstract:

For using the solid switch device instead of hydrogen thyratron,research has been done in high-power high voltage semiconductor switch and high speed high voltage combination circuits.Based on switch principle of power MOSFETs,the over driving technology