反熔丝FPGA器件γ剂量率辐射效应规律探讨

Study of radiation effects by transient γ-rays for anti-fuse FPGA

摘要:

FPGA系统电路进行抗γ剂量率器件选择是非常困难的。针对FPGA器件抗γ剂量率性能优选，试验研究了3种反熔丝FPGA器件的γ剂量率辐照效应规律。全部样品均出现了低阈值γ剂量率扰动效应，但均未产生高γ剂量率闭锁效应。FPGA器件低阈值γ剂量率失效主要是瞬时光电流扰动引起了时序逻辑功能的失效，而其模块海间的反熔丝开关电阻却对产生闭锁效应的大的辐射浪涌电流提供了保护。实验结果表明，系统电路设计加固是其实现抗γ剂量率最有效的方法。

Abstract:

The dose rate effects of anti-fuse FPGA was specifically studied for parts screening. The results of experiments showed that all of the test circuits were seriously disrupted by low level of transient γ radiation, but none of them had latch up effect in high level of radiation. The low level radiation damage was due to that the transient photocurrents had caused the disruption of logic functions of anti-fuse FPGA. Nevertheless, the resistance of programmable switches in sea-cells prevented the radiation induced latch up effect in anti-fuse FPGA. The study results showed that the circuits hardening design was the best method to increase radiation fault-tolerance of anti-fuse FPGA.