SOI CMOS SRAM单元单粒子翻转效应的模拟

Circuit simulation of SEU for SOI CMOS SRAM cells

摘要:

为简单快速模拟静态随机存储器(SRAM)的单粒子效应，在二维器件数值模拟的基础上，以经典的双指数模型为原型，通过数值拟合得到了单粒子效应瞬态电流脉冲的表达式，考虑晶体管偏压对瞬态电流的影响，得到修正的瞬态电流表达式，将其带入电路模拟软件HSPICE中进行SRAM存储单元单粒子翻转效应的电路模拟，通过与实际单粒子实验结果的对比，验证了这种模拟方法的实用性。

Abstract:

For the purpose of simulating the Single Event Upset(SEU) of a Static Random Access Memory(SRAM) cell fast and simply，a classical double exponential expression of a transient current pulse in a single event effect is confirmed by numerical optimization of results from 2-D device numerical simulation. An amended equation that gives the relationship between transistor bias voltage and transient current is derived by theoretical analysis. This equation can be used to simulate the SEU of a SRAM cell in the circuit simulation tool HSPICE. Finally, the practicability of this method is verified by the comparison with the result of SEU experiment.