一种新型SOI衬底上带有阳极辅助栅结构的SJ-LIGBT

Novel SJ-LIGBT with anode assistant gate on SOI substrate

摘要:

提出了一种新型的SOI衬底上的横向绝缘栅双极型晶体管(LIGBT)。该LIGBT在漂移区采用了超结(SJ)结构，并且在阳极采用了新颖的阳极辅助栅结构。这种器件由于采用了上述2种结构，相比于普通的LIGBT，它的正向压降更低，开关速度更快。文章对器件的一些关键参数(如P-drift区掺杂浓度、阳极栅宽度和载流子寿命)对器件关断时间的影响进行了仿真。仿真结果表明，提出的新型结构器件与常规LIGBT器件相比, 关断速度可以提高30%。

Abstract:

A new Lateral Insulated Gate Bipolar Transistor(LIGBT) on Silicon On Insulator(SOI) substrate with Super Junction(SJ) technology and anode assistant gate structure is proposed and discussed. This device shows low on-state voltage drop due to the SJ structure and high switching speed with the adoption of anode assistant gate structure. Simulations about how the key parameters (doping of Pdrift region, length of anode gate) influence the turn-off time are performed and the results show that switching performance of the proposed device can be improved by 30% compared with traditional LIGBT.