InP基三端太赫兹固态电子器件和电路发展

Development of InP-based three-terminal terahertz solid state electronic devices and circuits

摘要:

随着微电子技术的飞速发展，半导体器件的截止频率已经进入到太赫兹频段，太赫兹电路的频率特性得到极大发展。以固态器件为基础的太赫兹电路的工作频率进入到THz频段。本文重点介绍InP基双极器件和场效应器件的发展以及在太赫兹电路和系统中的应用。

Abstract:

The fast development of microelectronics makes the cutoff frequency of semiconductor devices exceed terahertz，which significantly improves the frequency characteristics of terahertz circuits. The solid-state electronic circuits can operate at terahertz frequency. The development of InP-based bipolar devices and field effect transistors are reviewed, and their applications in terahertz circuits and systems are introduced as well.