大功率半导体激光器脉冲驱动电源研制

Laser diode driver used for triggering Photoconductive Semiconductor Switch

摘要:

研制了一种大电流、窄脉宽的半导体激光器驱动电源，该驱动电源激励半导体激光器用于驱动砷化镓光导开关。驱动电路采用高速金属氧化物半导体场效应晶体管(MOSFET)作为开关，为半导体激光器提供一个前沿快(1.2 ns)、脉宽窄(15 ns)、峰值电流大(72 A)的脉冲驱动电流，并可根据需要调节电路中的参数，获得不同前沿、不同脉宽、不同峰值的电流脉冲。半导体激光器输出的激光脉冲功率可达75 W，上升前沿约3 ns，抖动均方根小于200 ps，可稳定触发工作在非线性模式下的砷化镓光导开关。

Abstract:

A new kind of driver for laser diode with high current and short duration is introduced. The laser diode is used for driving GaAs Photoconductive Semiconductor Switch(PCSS) in the experiment. The Metallic Oxide Semiconductor Field Effect Transistor(MOSFET) based driver provides a current trigger for laser diode, whose rise-time, Full Width Half Maximum(FWHM) and peak current are 1.2 ns, 15ns and 72 A, respectively. The parameters of the current trigger are adjustable. The peak power of the laser diode is 75 W, its output rise-time about 3 ns, and root mean square of jitter below 200 ps. Using this driver, the non-linear PCSS can be triggered stably.