高电子迁移率晶体管材料结构的制备及分析

Preparation and analysis of HEMT materials structure

摘要:

针对高电子迁移率晶体管(HEMT)器件，分析了双δ掺杂GaAs HEMT的结构组成，基于固源分子束外延方法制备了双δ掺杂GaAs HEMT的缓冲层、沟道层、平面掺杂层和隔离层等多层材料结构。采用X-ray射线衍射、透射电镜研究了多层材料的结构。范德堡霍尔测试结果表明，HEMT的2DEG测试浓度为1.82×1012 cm-3，电子迁移率大于6 520 cm2?V-1?s-1。

Abstract:

The study of High Electron Mobility Transistor(HEMT) devices is very important in many fields and is also of great significance for promoting the application of terahertz. In this paper, the structure of a double δ-doped GaAs HEMT has been analyzed. Multi-layer structure of a doubleδ-doped GaAs HEMT，which contains the buffer layer, the channel layer, the planar doped layer, the isolation layer and so on, is prepared by molecular beam epitaxy. The multi-layer structure has been studied using X-ray diffraction and transmission electron microscopy. Results of the Hall measurement indicate that the sheet density and mobility of 2DEG are 1.82×1012 cm-3 and above 6 520 cm2? V-1?s-1，respectively.