0.34 THz高速无线通信发射机芯片设计

A 340 GHz fully integrated transmitter for high-speed wireless communications

摘要:

基于0.13 μm SiGe BiCMOS工艺，设计了一个应用于0.34 THz高速通信系统的4路集成相控阵发射机芯片。该芯片集成了21.25 GHz的 锁相环(PLL)频率源、4倍频器、4路威尔金森(Wilkinson)功分网络，每一路相控阵通道包括85 GHz功率放大器、模拟移相器、20 Gbps 二进制启闭键控(OOK)调制器、4倍频器以及2×2片载天线阵列。针对系统各个模块进行了测试和分析，并且对系统方向图进行了仿真。仿真结果表明，该相控阵系统能在E面实现±12°的角度扫描，3 dB波束宽度为11.9°，系统有效等向辐射功率(EIRP)为12 dBm。该集成相控阵发射机芯片的面积为8 mm×4.3 mm。

Abstract:

A 340 GHz 4-way fully integrated phased array transmitter using 0.13 μm SiGe Bipolar Complementary Metal Oxide Semiconductor(BiCMOS) technology is presented. The chip integrates a 21.25 GHz Phase-Locked Loop(PLL) synthesizer source，a quadrupler together with a 1:4 Wilkinson network，power amplifiers, analog phase shifters，20 Gbps OOK modulators, and a 2×2 on-chip antenna array in each channel. The phased array transmitter are measured and analyzed. The phase array beam scanning capability，3 dB lobe width，and system Effective Isotropic Radiated Power(EIRP) of ±12°,10° and 12 dBm in E-plane are obtained，respectively. The chip size of the fully integrated phased array transmitter is 8 mm×4.3 mm.