纳米器件质子在轨单粒子翻转率预计方法

SEU rate calculation for nano device proton on orbit based on protons and heavy ions experimental data

摘要:

研究了纳米器件在空间轨道中质子引起单粒子翻转(SEU)率的预计方法。以65 nm SRAM为样品，利用加速器进行了质子和重离子单粒子翻转试验，分别基于质子试验数据和重离子试验数据，预计了空间轨道中质子引起的单粒子翻转率。结果表明，用重离子试验数据预计的质子单粒子翻转率比用质子试验数据预计的低1.5个数量级。研究认为，为了评估纳米器件单粒子翻转敏感性，需进行质子单粒子翻转试验，并基于质子试验数据进行在轨质子翻转率预计。

Abstract:

The methods of Single-Event Upset(SEU) rates calculation induced by protons on orbits are studied on nano device. The SEUs of 65 nm SRAM are tested by using heavy ions and protons generated by accelerator. The SEU rates induced by protons on orbit are calculated based on heavy ion and proton experimental data respectively. It is shown that the proton SEU rate obtained by heavy ion experimental data is 1.5 order of magnitude lower than that obtained by proton experimental data. The conclusion is that proton SEU test should be performed for nano device to evaluate its SEU sensitivity; and the proton SEU rate should be calculated based on the proton experimental data.