后端互联工艺对集成电路单粒子翻转效应的影响

Impact of backend interconnection process on the Single-Event-Effects in integrated circuits

摘要:

基于Geant4工具，进行高能粒子入射的蒙特卡洛仿真。介绍了仿真理论，以总反应截面和淀积电荷为参量，研究了后端金属互联工艺对于半导体集成电路单粒子翻转效应(SEE)的影响。实验结果表明，钨层的存在会对半导体器件的单粒子翻转效应有一定的增强作用。金属铝/铜与入射粒子的核反应作用效果相近，相交点对应的电荷淀积量在0.66 pC。大于此电荷量，铝的总反应截面大于铜；而小于此电荷量，则是铜的总反应截面大于铝。欧姆接触的阻挡层钛和氮化钛对单粒子翻转效应略有减缓作用。

Abstract:

The Monte Carlo simulations of high energy particles injection are conducted based on Geant4 tools. Simulation theory is introduced. The impacts of backend interconnection process on Single-Event-Effects(SEE) in integrated circuits are analyzed in terms of total reaction cross-section and deposited charge. It demonstrates that tungsten enhances the SEE in semiconductor devices. When high energy particles strike, the nuclear reaction effects are similar between Al and Cu. The deposited charge corresponding to the cross point is 0.66 pC. Beyond the cross point, the total reaction cross-section of Al is larger than that of Cu. Below the cross point, the trend is reversed. The block layer of ohmic contact such as Ti and TiN mitigates the SEE slightly.