一种应用于太赫兹频段的平面In0.53Ga0.47As耿氏二极管

Design and fabrication of planar In0.53Ga0.47As Gunn diode for terahertz wave application

摘要:

介绍了一种InP衬底上的平面In0.53Ga0.47As耿氏二极管的设计、制作和测试方法。为了提高器件的输出功率，使用Advanced Design System 2011仿真软件设计了50 ?共面波导馈电结构作为器件电极，减少测试功率损耗；同时在版图设计时加大了金属电极面积，改善器件的散热效果。测试结果表明，当所加电压为4.4 V时，沟道长度和宽度分别为2 μm和120 μm器件的基波振荡频率为168.3 GHz，输出功率为-5.21 dBm。这种高功率平面结构耿氏二极管在太赫兹频段具有巨大的应用潜力。

Abstract:

Fabrication and measurement of the In0.53Ga0.47As based planar Gunn diodes on the InP semi-insulating substrate is presented. In order to increase the RF output power of the planar Gunn devices, the planar Gunn diode is designed in 50 ? Co-Planar Wave(CPW) guide format, which is designed using the Advanced Design System(ADS-2011). Meanwhile, increasing the area of the metal pads can improve the heat dissipation. For a 120 μm wide device with a 2 μm channel length, experimental results show a fundamental oscillation frequency of 168.3 GHz with a RF output power of -5.21 dBm. These planar Gunn devices show great potential as solid-state THz signal sources.