IGCT在快脉冲条件下开通过程研究

Research on fast pulse switching process of IGCT

摘要:

集成门极换流晶闸管(IGCT)开关具有耐压高、通流能力强、工作重频高的特点，然而在纳秒级脉冲功率系统中应用较少。本文以株洲南车生产的非对称性IGCT做开关，通过搭建脉冲形成网络(PFN)纳秒级放电回路，初步研究了IGCT在快放电过程中的开关导通情况。通过理论分析、数值模拟和实验验证发现，目前工业领域的IGCT器件由于触发电流难以有效扩展导通，导致IGCT导通速度存在饱和值，很难在纳秒级别的脉冲下直接实现开关作用，但可以作为脉冲压缩的前级开关使用。

Abstract:

Integrated Gate Commutated Thyristor(IGCT) switches are widely applied in electric and electronics industry for its high voltage，large current and high working frequency. Nevertheless, IGCT switches are rarely adopted in nanosecond long pulse power systems. Through constructing nanosecond Pulse Forming Network(PFN) discharge electric circuit，the switching process of unsymmetrical IGCT produced by Rolling Stock Corporation(RSC) company is investigated under fast pulse conditions. Through theoretic analysis and numerical simulation，it shows that it is difficult for the triggering currency to be expanded and switched efficiently, which causes the velocity of IGCT and expending speed will reach saturated values, and therefore, the industrial IGCT cannot achieve a direct role in the nanosecond level switching pulses, but can be used as pulse compression pre-switch.