基于平面肖特基二极管的220 GHz二倍频器

A 220 GHz frequency doubler based on plannar Schottky diodes

摘要:

介绍了一个基于平面肖特基二极管的220 GHz倍频器。该倍频器工作在室温下，结构简单。为了实现倍频，将一个具有4个反向串联肖特基结的变容二极管安置在石英基片上，直流偏置通过一个石英微带构成的低通滤波器加到二极管上。所有的石英电路基片都用导电胶粘接在波导腔体上，波导腔体是E面剖分的，表面镀金。220 GHz倍频器的测试结果表明，在选择合适的偏置电阻时，该倍频器具有15 mW的输出功率和5%的效率。在213~230 GHz频段，二倍频器的输出功率均在10 mW以上，且带内的功率波动非常小。

Abstract:

The development of a 220 GHz frequency doubler based on GaAs plannar Schottky diodes is described. The doubler works at room temperature, and its structure is very simple. A plannar Schottky varactor flip chip with four anodes arranged in anti-series is mounted onto a quartz based microstrip circuit to realize frequency multiplication. DC bias is put on the varactor through a low-pass filter circuit which is also constructed on a quartz microstrip. All the quartz circuits are glued into the waveguide block with conductive adhesive. The block is split in the E-plane and its surface is gold plated. Test data for the 220 GHz doubler show 15 mW output power with 5% efficiency when appropriate external bias resistor is selected. Over the 213-230 GHz，the output power of the doubler is above 10 mW，and the power fluctuation in this band is very small.