硅基太赫兹技术及未来趋势

Silicon-based terahertz technologies and future trends

摘要:

不同于传统的太赫兹组件，基于硅基的太赫兹系统在大规模使用情况下具有成本低，尺寸小，集成度高，操作性强，更容易实现大阵列等特点。近10年来，随着硅基半导体技术的快速发展和硅基工艺晶体管的截止频率提升，硅基太赫兹系统芯片的设计发展迅猛。本文将主要从硅基太赫兹源、硅基太赫兹成像芯片、硅基太赫兹通信芯片、硅基太赫兹雷达芯片四个方面对当前的硅基太赫兹系统芯片的研究现状和发展趋势进行综述。

Abstract:

Being different from traditional terahertz components, silicon-based terahertz systems have the characteristics of low cost, small size, high integration, great maneuverability, and easier implementation of large arrays for large volume adoption. In the past ten years, with the rapid development of semiconductor technology and the increase of the cut-off frequency of silicon-based process transistors, the field of silicon-based terahertz system chip design has developed rapidly. The current research status and development trends of silicon-based terahertz system chips from four aspects: silicon-based terahertz sources, silicon-based terahertz imaging chips, silicon-based terahertz communication chips, and silicon-based terahertz radar chips are reviewed in this paper.