电离损伤效应漂移扩散模型的数值算法和应用

High–performance parallel algorithm for multi–component drift diffusion reaction model and its application on ionization effects

摘要:

针对半导体器件中的氧化物由于辐射电离损伤所产生的界面陷阱和体缺陷的模型，采用向后欧拉方法处理时间离散，采用线性化的方法处理带反应项的非线性漂移扩散反应方程，完成了氧化金属–绝缘层–半导体结构(MIS)中二氧化硅层产生界面缺陷和体缺陷的数值模拟。该算法在三维并行自适应有限元软件平台(PHG)上编程实现，模拟的数值结果与电离损伤实验中所出现的低剂量增强效应和在不同氢气浓度条件下的数据相符合。针对模拟结果给出了对应模型的结果分析。

Abstract:

The model of interface traps and body defects caused by radiation ionization damage in oxides in semiconductor devices is studied. Using the Backward Euler method to deal with the time discretion and using the linearity method to deal with the nonlinear drift-diffusion reaction equation, the numerical simulation of the interface traps and body traps generated by the silica layer in the Metal–Insulator–Semiconductor(MIS) structure is completed. The algorithm is implemented on the high-performance parallel finite element software―Parallel Hierarchical Grid(PHG). The numerical results of the simulation are consistent with the Enhanced Low Dose Rate Sensitivity(ELDRS) in the ionization damage experiment and the data under different hydrogen ambient conditions. The corresponding models are analyzed aiming for the simulation results.