锗硅异质结双极晶体管空间辐射效应研究进展

Advance in space radiation effects of SiGe heterojunction bipolar transistors

摘要:

异质结带隙渐变使锗硅异质结双极晶体管(SiGe HBT)具有良好的温度特性，可承受-180~+200 ℃的极端温度，在空间极端环境领域具有诱人的应用前景。然而，SiGe HBT器件由于材料和工艺结构的新特征，其空间辐射效应表现出不同于体硅器件的复杂特征。本文详述了SiGe HBT的空间辐射效应研究现状，重点介绍了国产工艺SiGe HBT的单粒子效应、总剂量效应、低剂量率辐射损伤增强效应以及辐射协同效应的研究进展。研究表明，SiGe HBT作为双极晶体管的重要类型，普遍具有较好的抗总剂量和位移损伤效应的能力，但单粒子效应是制约其空间应用的瓶颈问题。由于工艺的不同，国产SiGe HBT还表现出显著的低剂量率辐射损伤增强效应响应和辐射协同效应。

Abstract:

Silicon-Germanium Heterojunction Bipolar Transistors(SiGe HBTs) is a strong contender for space applications in extreme environment on account of its superior temperature characteristics, which can bear extreme temperatures from -180 ℃ to 200 ℃ owing to the bandgap grading of heterojunction. Because of new features in material, structure and process, the radiation effects of SiGe HBTs present complex characteristics which are different from those of bulk-Si devices. In this work,the research dynamics and trends of space radiation effects in SiGe HBTs are introduced, and the radiation effects of domestic SiGe HBTs include Single Event Effects(SEE), Total Ionizing Dose(TID) effect, Enhanced Low Dose Rate Sensitivity(ELDRS) and synergistic effect are highlighted. The research shows that SiGe HBT naturally presents favorable build-in TID and displacement damage hardness without any radiation hardening, but the high sensitivity to SEE is a main drawback. Due to the different manufacturing processes, the domestic SiGe HBTs experience significant low dose rate sensitivity and are vulnerable to combined effect of ionizing dose/displacement damage and total ionizing dose on single event effect.