太赫兹带阻滤波器工艺研究

Investigation on fabrication technology of terahertz bandstop filter

摘要:

以中心工作频率130 GHz、衰减深度为-40 dB的太赫兹带阻滤波器为制备对象，介绍了其在制备过程中蒸镀、光刻、显影及湿法刻蚀等工艺步骤中的一些技术细节。制备得到的太赫兹滤波器加工误差<±3 μm，考察了加工误差对滤波器传输性能的影响，该加工误差在可接受范围。为进一步验证工艺的可靠性，使用空间测量装置获得了滤波器样品传输性能，测试结果与设计值吻合度较好。最后，探讨了本工艺推广至更高频率器件的适用性及需要改进之处。文中介绍的硅基太赫兹器件加工工艺适用于电子器件与光子器件的融合发展。

Abstract:

The fabrication of a terahertz filter with -40 dB attenuation depth at the resonant frequency of 130 GHz is presented, while some technical details during the procedures of evaporation, lithography, development and wet etching are introduced. The error of the fabricated filter sample is <±3 μm, which is acceptable by the investigation of the effect of machining errors on transmission characteristics. The measured transmission response of the fabricated sample by employing free space measurement setup is in good agreement with the design, which demonstrates the reliability and robustness of the fabrication technology. Finally, the feasibility and improvements of the presented fabrication technology applied to higher frequency devices are discussed. The presented technology based on silicon substrate is helpful in integration development of electronics devices and photonic devices.