SiGe HBT单粒子效应关键影响因素数值仿真

Simulation on key influencing factors of Single Event Effects on SiGe HBT

摘要:

针对锗硅异质结双极晶体管(SiGe HBT)，采用半导体三维器件数值仿真工具，建立单粒子效应三维损伤模型，研究SiGe HBT单粒子效应的损伤机理，以及空间极端环境与器件不同工作模式耦合作用下的单粒子效应关键影响因素。分析比较不同条件下离子入射器件后，各端口瞬态电流的变化情况，仿真实验结果表明，不同工作电压下，器件处于不同极端温度、不同离子辐射环境，其单粒子瞬态的损伤程度有所不同，这与器件内部在不同环境下的载流子电离情况有关。

Abstract:

The simulation of the semiconductor 3D device is performed to establish the 3D damagemodel to study the damage mechanism of the Single Event Effects(SEE) in SiGe Heterojunction Bipolar Transistor(HBT), as well as the key factors influencing the Single Event Effect under the coupling action of different working modes and extreme space environment. The transient current changes of each terminal are analyzed and compared after the ions striking on the device under different conditions. The results show that under different operating voltages, the degree of SEE damage is different in different extreme temperatures and different ion radiation environments, which is related to the ionization of carriers in different environments within the device.