不同偏置下CCD器件γ射线及质子辐射研究

Damage mechanism of γ-ray and proton radiation effects of CCD under different bias conditions

摘要:

电荷耦合器件(CCD)是用于空间光电系统可见光成像的图像传感器，在空间应用环境下受辐射效应作用导致CCD性能退化甚至失效。对于CCD空间辐射效应的地面模拟试验研究，辐照试验中CCD采用合适的偏置条件是分析其空间辐射损伤的必要措施。由于CCD对质子辐照导致的电离总剂量效应和位移损伤效应均非常敏感，因此针对CCD空间应用面临的电离总剂量效应和位移损伤效应威胁，开展不同辐照偏置下CCD的辐射效应及损伤机理研究。针对一款国产埋沟CCD器件，开展不同偏置条件下的γ射线和质子辐照试验，获得了CCD的暗电流、光谱响应等辐射敏感参数的电离总剂量效应，位移损伤效应退化规律以及辐照偏置对CCD辐射效应的影响机制。研究表明，γ射线辐照下CCD的偏置产生重要影响，质子辐照下没有明显的偏置效应。根据CCD结构和辐照后的退火试验结果，对CCD的辐射效应损伤机理进行分析。

Abstract:

Charge-Coupled Devices(CCD) is an image sensor used for visible light imaging in space photoelectric systems. For the ground simulation test of the space radiation effect of CCD, it is necessary to use appropriate bias conditions to analyze the space radiation damage of CCD. Because CCD is very sensitive to the total ionizing dose effect and displacement effect, it is of great significance to study the radiation effect and damage mechanism of CCD under different bias conditions because of the threat of the damaging effect faced by CCD space application. In this paper, γ-ray, and proton irradiation experiments are carried out on a buried channel CCD device under different bias conditions. The degradation rules of the total ionizing dose and displacement damage about radiation-sensitive parameters such as dark current and spectral response of CCD are obtained; as well as the damage mechanism of irradiation bias on the radiation effect of CCD. The results show that the bias of CCD under γ-ray irradiation has an important effect, but there is no obvious effect under proton irradiation. Meanwhile, the radiation damage mechanism of CCD is analyzed according to the structure of CCD and the results of the annealing test after irradiation.