HEMT器件质子辐射效应仿真

Simulation of proton radiation effect in HEMT devices

摘要:

GaN基高电子迁移率晶体管(HEMT)器件具有抗高频、耐高温、大功率、抗辐射等特性，在核反应堆、宇宙探测等辐射环境中具有广阔的应用前景。借助SRIM软件仿真1.8 MeV质子辐射对不同AlGaN势垒层纵向尺寸下的常规耗尽型器件内部产生空位密度的影响，并观察空位密度随深度的变化规律。在最优AlGaN势垒层厚度条件下，通过仿真对比5种不同栅氧层材料的MIS-HEMT器件，发现氮化铝(AlN)栅氧层材料具有相对较好的抗辐射效果。

Abstract:

GaN High-Electron-Mobility Transistors(HEMTs) devices bear the characteristics of high frequency resistance, high temperature resistance, high power and radiation resistance, which have broad application prospects in radiation environments such as nuclear reactors, cosmic detection and other radiation environments. Therefore, Stopping and Range of Ions in Matter(SRIM) is employed to simulate the effect of 1.8 MeV proton radiation on the conventional depletion device with different AlGaN barriers, and to observe the change law of vacancy density with depth. Under the optimal AlGaN barrier thickness, the MIS-HEMT devices of five different gate oxygen layer materials are simulated and compared. It is found that the material of Aluminum Nitride(AlN) gate oxygen layer bears relatively good radiation resistance.