新型二阶磁控忆阻器简化模型的设计与验证

Design and verification of simplified model of new second-order magnetron memristor

摘要:

忆阻理论的提出极大地推进了混沌系统的发展，丰富了混沌电路的动力学行为。运算放大器因其强大的信号处理能力，成为忆阻器电路模型的重要组成部分。本文基于低功耗差分对构建了一种极简化的运算放大器，该运算放大器将所需晶体管数目减少至2个；以此运算放大器为基础，设计了新型二阶磁控忆阻器的模拟等效电路模型和硬件实验电路。结果表明：激励信号频率增加，斜“8”字形紧磁滞回线的旁瓣面积减小；激励信号幅度增加，斜“8”字形紧磁滞回线的旁瓣面积增加。电路仿真结果与硬件电路实验结果验证了新型磁控忆阻器模型的有效性与设计方法的正确性。

Abstract:

The proposal of memristor theory has greatly promoted the development of chaotic systems, enriching the dynamics of chaotic circuits. The operational amplifier becomes an important part of the memory circuit model due to its powerful signal processing capacity. In this paper, a simplified operational amplifier based on low power differential pair is constructed and this operational amplifier reduces the number of required transistors to two. Then, the simulation equivalent circuit model and hardware experimental circuit of a new type of second-order magnetron memristor are created. The results show that with the increase of the excitation signal frequency, the side lobe area of the "8" decreases; with the increase of the excitation signal amplitude, the side lobe area of the "8" increases. The results of circuit simulation and hardware circuit experiments have verified the validity of the new model of magnetron memristor and the accuracy of the design method.