一种基于CMOS的宽带抗阻塞射频接收机设计

Design of a broadband blocker-tolerant RF receiver based on CMOS

摘要:

针对在多频段、多模式无线通信应用中传统射频接收机频段单一、集成度低的问题，基于N通道滤波技术与接收机集成化技术，提出一种基于互补金属氧化物半导体(CMOS)的宽带抗阻塞射频接收机。该接收机集成N通道混频器与基带滤波器，在65 nm CMOS工艺下进行版图测试。仿真实验结果表明，该接收机在5 MHz的基带带宽外提供超过60 dB的带外阻塞抑制，频率调谐范围0.25~2.5 GHz；前置内嵌巴伦的低噪声放大器，使接收机转换增益达到46 dB，同时降低整体噪声系数至3.1~4 dB；实现了24.5 dBm的带外三阶交调截取点(IIP3)，功耗为26 mW。

Abstract:

Aiming at the problem of single frequency band and low integration of traditional RF receivers in multi-band and multi-mode wireless communication applications, a broadband blocker-tolerant RF receiver based on Complementary Metal Oxide Semiconductor(CMOS) with N-path filtering and receiver integration technology is proposed. The receiver integrates an N-path mixer and baseband filter. Layout testing under 65 nm CMOS process shows that the receiver provides more than 60 dB of out-of-band rejection outside of the 5 MHz baseband bandwidth and frequency tuning range of 0.25~2.5 GHz. The front balun's low-noise amplifier achieves a receiver conversion gain of 46 dB while reducing the overall Noise Figure(NF) to 3.1~4 dB. The receiver also achieves 24.5 dBm Out-of-Band Third-order Intercept Point(IIP3) and consumes only 26 mW.