一种10 kV/10 ns/20 A全固态脉冲源设计

Design of a 10 kV/10 ns /20 A all solid state pulse generator

摘要:

为获得等离子体研究所需的半高宽约10 ns的高压高重复频率脉冲输出，采用金属氧化物半导体场效应晶体管(MOSFET)开关串联构成的2组高压开关模块，利用传统电容储能脉冲产生电路和脉冲切尾电路相结合产生窄脉冲。结合开关实际工作需求，开展了窄脉冲产生电路适应性设计及仿真优化；依据优化结果，搭建窄脉冲产生电路实验装置。经测试，在500 Ω负载上获得了峰值电压约10 kV、半高宽约10 ns、前沿约6 ns的脉冲输出。

Abstract:

To obtain the high-voltage high-repetition-rate pulse output with a half-width of about 10 ns required for plasma research, two sets of high-voltage switch modules composed of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) switches in series are used. By combining traditional capacitor energy storage pulse generation circuits with pulse tail cutting circuits, narrow pulses are generated. Based on the actual working requirements of the switches, adaptive design and simulation optimization of the narrow pulse generation circuit are carried out; according to the optimization results, an experimental device for narrow pulse generation circuit is built. After testing, a pulse output with a peak voltage about 10 kV, a half-width about 10 ns, and a front edge about 6 ns is obtained on a load of 500 Ω.