4 kV Nanosecond Pulser Using Metallic Oxide Semiconductor Field-Effect Transistor
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    Abstract:

    For using the solid switch device instead of hydrogen thyratron,research has been done in high-power high voltage semiconductor switch and high speed high voltage combination circuits.Based on switch principle of power MOSFETs,the over driving technology

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陈静,陈敏德.基于功率MOS型场效应管的4 kV纳秒脉冲源[J]. Journal of Terahertz Science and Electronic Information Technology ,2008,6(3):

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