Novel SJ-LIGBT with anode assistant gate on SOI substrate

Abstract:

A new Lateral Insulated Gate Bipolar Transistor(LIGBT) on Silicon On Insulator(SOI) substrate with Super Junction(SJ) technology and anode assistant gate structure is proposed and discussed. This device shows low on-state voltage drop due to the SJ structure and high switching speed with the adoption of anode assistant gate structure. Simulations about how the key parameters (doping of Pdrift region, length of anode gate) influence the turn-off time are performed and the results show that switching performance of the proposed device can be improved by 30% compared with traditional LIGBT.