Preparation and analysis of HEMT materials structure

Abstract:

The study of High Electron Mobility Transistor(HEMT) devices is very important in many fields and is also of great significance for promoting the application of terahertz. In this paper, the structure of a double δ-doped GaAs HEMT has been analyzed. Multi-layer structure of a doubleδ-doped GaAs HEMT，which contains the buffer layer, the channel layer, the planar doped layer, the isolation layer and so on, is prepared by molecular beam epitaxy. The multi-layer structure has been studied using X-ray diffraction and transmission electron microscopy. Results of the Hall measurement indicate that the sheet density and mobility of 2DEG are 1.82×1012 cm-3 and above 6 520 cm2? V-1?s-1，respectively.