A large power 2.45 GHz microwave rectifier based on GaAs transistor

Abstract:

A microwave GaAs transistor rectifier at 2.45 GHz based on microstrip lines is presented in this paper. The GaAs transistor has enhanced the rectifier power capacitance greatly. The proposed rectifier bears a power to weight ratio much higher than conventional rectifiers based on Schottky diodes. The measured results show that the rectifier achieves 41% of its highest rectifying efficiency when the input microwave power reaches 30 dBm and the DC load is 38 Ω；the rectifier reaches its highest DC output power 28.7 dBm with an input microwave power at 34 dBm and a DC load of 23 Ω. The GaAs transistor rectifiers will be applied to microwave power transmission systems with strict power to weight ratio requirements. The rectifiers may own higher conversion efficiency with improved circuit design and can be applied to high power to weight rectennas.