Progress in the study of irradiation effects of graphene and graphene field effect transistors
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1.School of Electronic Science and Engineering(National Exemplary School of Microelectronics),University of Electronic Science and Technology of China,Chengdu Sichuan 611731,China;2.Yangtze Delta Region Institute,University of Electronic Science and Technology of China,Huzhou Zhejiang 313000,China

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    Abstract:

    Graphene has become a type of important material for the construction of new nanoelectronic devices due to its high mobility, high thermal conductivity, good flexibility as well as mechanical strength. When graphene materials and their electronic devices are placed in a scene containing irradiation factors, the lattice structure can be changed. The charges then are accumulated due to interactions with high-energy photons and charged particles, resulting in changes in the performance of graphene materials and electronic devices. This paper mainly reviews the main effects of typical irradiation factors on graphene and its devices and the research progress, aiming to summarize the physical effects induced by irradiations on graphene and its electronic devices. This work deepens the understanding of the irradiation effect on graphene materials and devices, and lays a foundation for promoting its practical application in the irradiation scene.

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史明霞,王焕灵,陈飞良,李沫,张健.石墨烯及石墨烯场效应管的辐照效应研究进展[J]. Journal of Terahertz Science and Electronic Information Technology ,2022,20(6):513~522

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History
  • Received:February 26,2022
  • Revised:March 14,2022
  • Adopted:
  • Online: July 11,2022
  • Published: