DSOI total dose-effect model and back-bias control model

Abstract:

The total dose damage to the Double buried oxide layer Silicon-On-Insulator silicon Metal Oxide Semiconductor Field Effect Transistor(DSOI MOSFET) is studied as well as the regulation of the back gate bias by the total dose radiation. The mechanism of the degradation of the electrical parameters of the transistor caused by the radiation is analyzed, and DSOI transistor total dose effect Simulation Program with Integrated Circuit Emphasis(SPICE) model is established. The model simulates the transistor threshold voltage, the simulated and measured results are below 6 mV. The corresponding back gate bias compensation model is given according to the total dose effect model. The SPICE model simulation output of the total dose effect is regulated by the transistor back bias. Comparing the compensation voltage with the experimental test results, the error of the back-bias control model of NMOSFET is 9.65%, and that of PMOSFET is 5.24%.