Design of 260 GHz GaN frequency tripler with high output power
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1.The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang Hebei 050051,China;2.National Key Laboratory of Solid-State Microwave Devices and Circuits,Shijiazhuang Hebei 050051,China

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    Abstract:

    A 260 GHz frequency tripler based on GaN Schottky barrier diode is proposed. Unbalanced structure is adopted with GaN SBD chip to improve the tolerable power and output power of the circuit. The height-reduced and width-reduced output waveguide structure is employed to suppress the second harmonic. The input and output filter of the frequency multiplier is designed with high and low impedance strip line structure. The test results show that the frequency multiplier achieves a maximum output power of 69.1 mW and conversion efficiency of 3.3% at 261 GHz with good harmonic suppression characteristics.

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盛百城,宋旭波,顾国栋,张立森,刘帅,万悦,魏碧华,李鹏雨,郝晓林,梁士雄,冯志红.260 GHz GaN高功率三倍频器设计[J]. Journal of Terahertz Science and Electronic Information Technology ,2024,22(3):290~295

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History
  • Received:June 15,2023
  • Revised:August 09,2023
  • Adopted:
  • Online: April 03,2024
  • Published: