A T/R module based on silicon-based MEMS 3D integration technology
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The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang Hebei 050051,China

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    Abstract:

    A Ku-band dual-channel 3D integrated T/R module for array antenna system is designed and fabricated based on silicon Micro-Electro Mechanical System(MEMS) technology. The module consists of two layers of silicon-based packages stacked by Ball Grid Array(BGA). The upper and lower layers of silicon-based packages are realized by five layers of silicon wafers through Through-Silicon-Via(TSV) and wafer-level bonding. The module integrates the functions such as 6 bit digital control phase shifting, 6 bit digital control attenuation and serial-to-parallel conversion, negative voltage bias, power modulation. The finished module size is only 15 mm×8 mm×3.8 mm. The test results show that in the Ku-band, the saturation output power of the transmitting channel is greater than 24 dBm, the gain of transmitting channel reaches 20 dB, the gain of the receiving channel is greater than 20 dB, and the noise coefficient is less than 3.0 dB. The assembly bears the advantages of high performance, light weight, small volume, high machining precision and high assembly efficiency.

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陈兴,张超,李晓林,赵永志.一种基于硅基MEMS三维异构集成技术的T/R组件[J]. Journal of Terahertz Science and Electronic Information Technology ,2024,22(3):331~336

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History
  • Received:July 28,2023
  • Revised:September 26,2023
  • Adopted:
  • Online: April 03,2024
  • Published: