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2022, 20(6):523-534.
DOI: 10.11805/TKYDA2021443
Abstract:
Silicon-Germanium Heterojunction Bipolar Transistors(SiGe HBTs) is a strong contender for space applications in extreme environment on account of its superior temperature characteristics, which can bear extreme temperatures from -180 ℃ to 200 ℃ owing to the bandgap grading of heterojunction. Because of new features in material, structure and process, the radiation effects of SiGe HBTs present complex characteristics which are different from those of bulk-Si devices. In this work,the research dynamics and trends of space radiation effects in SiGe HBTs are introduced, and the radiation effects of domestic SiGe HBTs include Single Event Effects(SEE), Total Ionizing Dose(TID) effect, Enhanced Low Dose Rate Sensitivity(ELDRS) and synergistic effect are highlighted. The research shows that SiGe HBT naturally presents favorable build-in TID and displacement damage hardness without any radiation hardening, but the high sensitivity to SEE is a main drawback. Due to the different manufacturing processes, the domestic SiGe HBTs experience significant low dose rate sensitivity and are vulnerable to combined effect of ionizing dose/displacement damage and total ionizing dose on single event effect.
Silicon-Germanium Heterojunction Bipolar Transistors(SiGe HBTs) is a strong contender for space applications in extreme environment on account of its superior temperature characteristics, which can bear extreme temperatures from -180 ℃ to 200 ℃ owing to the bandgap grading of heterojunction. Because of new features in material, structure and process, the radiation effects of SiGe HBTs present complex characteristics which are different from those of bulk-Si devices. In this work,the research dynamics and trends of space radiation effects in SiGe HBTs are introduced, and the radiation effects of domestic SiGe HBTs include Single Event Effects(SEE), Total Ionizing Dose(TID) effect, Enhanced Low Dose Rate Sensitivity(ELDRS) and synergistic effect are highlighted. The research shows that SiGe HBT naturally presents favorable build-in TID and displacement damage hardness without any radiation hardening, but the high sensitivity to SEE is a main drawback. Due to the different manufacturing processes, the domestic SiGe HBTs experience significant low dose rate sensitivity and are vulnerable to combined effect of ionizing dose/displacement damage and total ionizing dose on single event effect.
2022, 20(6):535-542.
DOI: 10.11805/TKYDA2022012
Abstract:
GaN High Electron Mobility Transistor(HEMT) devices have superior advantages in high-frequency, high-power, high-temperature and high-pressure applications, and due to the excellent radiation resistance characteristics of gallium nitride materials, the devices are useful in radiation environments such as satellites, space exploration, and nuclear reactors. Although the theory and some existing experimental results have shown that GaN materials have excellent radiation resistance properties, in actual situations, the radiation resistance properties of GaN HEMT devices are greatly affected and challenged due to the influence of the device manufacturing process and structure. The major radiation effects of GaN HEMT devices are discussed, and the radiation research of GaN HEMT devices is reviewed.
GaN High Electron Mobility Transistor(HEMT) devices have superior advantages in high-frequency, high-power, high-temperature and high-pressure applications, and due to the excellent radiation resistance characteristics of gallium nitride materials, the devices are useful in radiation environments such as satellites, space exploration, and nuclear reactors. Although the theory and some existing experimental results have shown that GaN materials have excellent radiation resistance properties, in actual situations, the radiation resistance properties of GaN HEMT devices are greatly affected and challenged due to the influence of the device manufacturing process and structure. The major radiation effects of GaN HEMT devices are discussed, and the radiation research of GaN HEMT devices is reviewed.
2022, 20(6):543-548.
DOI: 10.11805/TKYDA2022001
Abstract:
The irradiation effect of fast neutrons(1.2 MeV) on Gallium Nitride(GaN) white Light-Emitting Diodes(LEDs) with fluence of 1×1014 cm-2 is reported. The Electroluminescence(EL) spectrum, output power-current(L-I) and current-voltage(I-U) characteristics of the device are measured and analyzed. It is found that the optical output power decreasing after irradiation, while the shape of the EL spectrum almost remains unchanged, indicating that the neutron irradiation mainly causes damage to the blue LED chip. Further analysis shows that neutron irradiation leads to the generation of a large number of nonradiative recombination centers in the quantum well, which increases the leakage current and decreases the carrier density, thus reducing the output power of LED. In addition, the influencing factors caused by neutron irradiation are added to the original equivalent circuit model of GaN-based LEDs. This model not only helps to understand the mechanism of the degradation of the neutron irradiation on the LED output power, but also provides a feasible method to predict the change of the output power after irradiation.
The irradiation effect of fast neutrons(1.2 MeV) on Gallium Nitride(GaN) white Light-Emitting Diodes(LEDs) with fluence of 1×1014 cm-2 is reported. The Electroluminescence(EL) spectrum, output power-current(L-I) and current-voltage(I-U) characteristics of the device are measured and analyzed. It is found that the optical output power decreasing after irradiation, while the shape of the EL spectrum almost remains unchanged, indicating that the neutron irradiation mainly causes damage to the blue LED chip. Further analysis shows that neutron irradiation leads to the generation of a large number of nonradiative recombination centers in the quantum well, which increases the leakage current and decreases the carrier density, thus reducing the output power of LED. In addition, the influencing factors caused by neutron irradiation are added to the original equivalent circuit model of GaN-based LEDs. This model not only helps to understand the mechanism of the degradation of the neutron irradiation on the LED output power, but also provides a feasible method to predict the change of the output power after irradiation.
2022, 20(6):549-556.
DOI: 10.11805/TKYDA2021418
Abstract:
The total dose damage to the Double buried oxide layer Silicon-On-Insulator silicon Metal Oxide Semiconductor Field Effect Transistor(DSOI MOSFET) is studied as well as the regulation of the back gate bias by the total dose radiation. The mechanism of the degradation of the electrical parameters of the transistor caused by the radiation is analyzed, and DSOI transistor total dose effect Simulation Program with Integrated Circuit Emphasis(SPICE) model is established. The model simulates the transistor threshold voltage, the simulated and measured results are below 6 mV. The corresponding back gate bias compensation model is given according to the total dose effect model. The SPICE model simulation output of the total dose effect is regulated by the transistor back bias. Comparing the compensation voltage with the experimental test results, the error of the back-bias control model of NMOSFET is 9.65%, and that of PMOSFET is 5.24%.
The total dose damage to the Double buried oxide layer Silicon-On-Insulator silicon Metal Oxide Semiconductor Field Effect Transistor(DSOI MOSFET) is studied as well as the regulation of the back gate bias by the total dose radiation. The mechanism of the degradation of the electrical parameters of the transistor caused by the radiation is analyzed, and DSOI transistor total dose effect Simulation Program with Integrated Circuit Emphasis(SPICE) model is established. The model simulates the transistor threshold voltage, the simulated and measured results are below 6 mV. The corresponding back gate bias compensation model is given according to the total dose effect model. The SPICE model simulation output of the total dose effect is regulated by the transistor back bias. Comparing the compensation voltage with the experimental test results, the error of the back-bias control model of NMOSFET is 9.65%, and that of PMOSFET is 5.24%.
2022, 20(6):513-522.
DOI: 10.11805/TKYDA2022062
Abstract:
Graphene has become a type of important material for the construction of new nanoelectronic devices due to its high mobility, high thermal conductivity, good flexibility as well as mechanical strength. When graphene materials and their electronic devices are placed in a scene containing irradiation factors, the lattice structure can be changed. The charges then are accumulated due to interactions with high-energy photons and charged particles, resulting in changes in the performance of graphene materials and electronic devices. This paper mainly reviews the main effects of typical irradiation factors on graphene and its devices and the research progress, aiming to summarize the physical effects induced by irradiations on graphene and its electronic devices. This work deepens the understanding of the irradiation effect on graphene materials and devices, and lays a foundation for promoting its practical application in the irradiation scene.
Graphene has become a type of important material for the construction of new nanoelectronic devices due to its high mobility, high thermal conductivity, good flexibility as well as mechanical strength. When graphene materials and their electronic devices are placed in a scene containing irradiation factors, the lattice structure can be changed. The charges then are accumulated due to interactions with high-energy photons and charged particles, resulting in changes in the performance of graphene materials and electronic devices. This paper mainly reviews the main effects of typical irradiation factors on graphene and its devices and the research progress, aiming to summarize the physical effects induced by irradiations on graphene and its electronic devices. This work deepens the understanding of the irradiation effect on graphene materials and devices, and lays a foundation for promoting its practical application in the irradiation scene.
2022, 20(6):557-564.
DOI: 10.11805/TKYDA2021442
Abstract:
In order to explore the problem of the difference of dose response of P-channel Metal Oxide Semiconductor(PMOS) dosimeter to photons of 60Co and 10 keV photons, comparative irradiation tests of 60Co Gamma ray and 10 keV X-ray on 400 nm-PMOS dosimeter with different gate voltages are carried out. The effect of oxide trap charge and interface state trap charge are separated by the mid gap technique and charge pumping method. It is found that the response of PMOS to 10 keV X-ray is significantly lower than that to 60Co gamma rays. The main difference is from oxides-trap charge. The difference of annealing indicates that the trap charge competition mechanism is different between gamma and X-rays, and different analysis methods also bring some discrepancy. By using dose factor and charge yield correction, the difference of dose response is reduced, and the microphysical mechanism of the response is explained. The dose response difference between gamma and 10 keV X-rays can be greatly reduced by effective dose correction and charge yield correction, which provides reference for the application of PMOS in low energy photon radiation environment.
In order to explore the problem of the difference of dose response of P-channel Metal Oxide Semiconductor(PMOS) dosimeter to photons of 60Co and 10 keV photons, comparative irradiation tests of 60Co Gamma ray and 10 keV X-ray on 400 nm-PMOS dosimeter with different gate voltages are carried out. The effect of oxide trap charge and interface state trap charge are separated by the mid gap technique and charge pumping method. It is found that the response of PMOS to 10 keV X-ray is significantly lower than that to 60Co gamma rays. The main difference is from oxides-trap charge. The difference of annealing indicates that the trap charge competition mechanism is different between gamma and X-rays, and different analysis methods also bring some discrepancy. By using dose factor and charge yield correction, the difference of dose response is reduced, and the microphysical mechanism of the response is explained. The dose response difference between gamma and 10 keV X-rays can be greatly reduced by effective dose correction and charge yield correction, which provides reference for the application of PMOS in low energy photon radiation environment.
2022, 20(9):903-907.
DOI: 10.11805/TKYDA2022007
Abstract:
The effect of total ionizing dose on the time-dependent breakdown characteristics of the high dielectric constant HfO2-based gate dielectric used in nano-Metal-Oxide-Semiconductor(MOS) devices has been investigated. The MOS capacitor with HfO2-based gate dielectrics is taken as the research object, a total dose ionization irradiation experiment of 60Co-γ rays with different gate biases is carried out. The test results of current-voltage, capacitance-voltage and time-dependent dielectric breakdown characteristics of MOS capacitor before and after irradiation are compared. The results show that the damage characteristics of MOS capacitors are different under different irradiation bias conditions. Under positive bias irradiation, the gate current increases significantly at low gate voltage, and the slope of capacitance-voltage characteristic decreases. Under zero bias irradiation, the gate current and capacitance increase significantly at high forward gate voltage. Under negative bias irradiation, the gate current increases, the capacitance increases under high forward gate voltage while the capacitance slope decreases. The time-dependent breakdown voltage of the capacitor decreases significantly under all three bias conditions. This study provides a reference for the long-term reliability study of nano-MOS devices in radiation environments.
The effect of total ionizing dose on the time-dependent breakdown characteristics of the high dielectric constant HfO2-based gate dielectric used in nano-Metal-Oxide-Semiconductor(MOS) devices has been investigated. The MOS capacitor with HfO2-based gate dielectrics is taken as the research object, a total dose ionization irradiation experiment of 60Co-γ rays with different gate biases is carried out. The test results of current-voltage, capacitance-voltage and time-dependent dielectric breakdown characteristics of MOS capacitor before and after irradiation are compared. The results show that the damage characteristics of MOS capacitors are different under different irradiation bias conditions. Under positive bias irradiation, the gate current increases significantly at low gate voltage, and the slope of capacitance-voltage characteristic decreases. Under zero bias irradiation, the gate current and capacitance increase significantly at high forward gate voltage. Under negative bias irradiation, the gate current increases, the capacitance increases under high forward gate voltage while the capacitance slope decreases. The time-dependent breakdown voltage of the capacitor decreases significantly under all three bias conditions. This study provides a reference for the long-term reliability study of nano-MOS devices in radiation environments.
2022, 20(9):915-921.
DOI: 10.11805/TKYDA2022009
Abstract:
Charge-Coupled Devices(CCD) is an image sensor used for visible light imaging in space photoelectric systems. For the ground simulation test of the space radiation effect of CCD, it is necessary to use appropriate bias conditions to analyze the space radiation damage of CCD. Because CCD is very sensitive to the total ionizing dose effect and displacement effect, it is of great significance to study the radiation effect and damage mechanism of CCD under different bias conditions because of the threat of the damaging effect faced by CCD space application. In this paper, γ-ray, and proton irradiation experiments are carried out on a buried channel CCD device under different bias conditions. The degradation rules of the total ionizing dose and displacement damage about radiation-sensitive parameters such as dark current and spectral response of CCD are obtained; as well as the damage mechanism of irradiation bias on the radiation effect of CCD. The results show that the bias of CCD under γ-ray irradiation has an important effect, but there is no obvious effect under proton irradiation. Meanwhile, the radiation damage mechanism of CCD is analyzed according to the structure of CCD and the results of the annealing test after irradiation.
Charge-Coupled Devices(CCD) is an image sensor used for visible light imaging in space photoelectric systems. For the ground simulation test of the space radiation effect of CCD, it is necessary to use appropriate bias conditions to analyze the space radiation damage of CCD. Because CCD is very sensitive to the total ionizing dose effect and displacement effect, it is of great significance to study the radiation effect and damage mechanism of CCD under different bias conditions because of the threat of the damaging effect faced by CCD space application. In this paper, γ-ray, and proton irradiation experiments are carried out on a buried channel CCD device under different bias conditions. The degradation rules of the total ionizing dose and displacement damage about radiation-sensitive parameters such as dark current and spectral response of CCD are obtained; as well as the damage mechanism of irradiation bias on the radiation effect of CCD. The results show that the bias of CCD under γ-ray irradiation has an important effect, but there is no obvious effect under proton irradiation. Meanwhile, the radiation damage mechanism of CCD is analyzed according to the structure of CCD and the results of the annealing test after irradiation.
2022, 20(9):869-876.
DOI: 10.11805/TKYDA2021439
Abstract:
The simulation of the semiconductor 3D device is performed to establish the 3D damagemodel to study the damage mechanism of the Single Event Effects(SEE) in SiGe Heterojunction Bipolar Transistor(HBT), as well as the key factors influencing the Single Event Effect under the coupling action of different working modes and extreme space environment. The transient current changes of each terminal are analyzed and compared after the ions striking on the device under different conditions. The results show that under different operating voltages, the degree of SEE damage is different in different extreme temperatures and different ion radiation environments, which is related to the ionization of carriers in different environments within the device.
The simulation of the semiconductor 3D device is performed to establish the 3D damagemodel to study the damage mechanism of the Single Event Effects(SEE) in SiGe Heterojunction Bipolar Transistor(HBT), as well as the key factors influencing the Single Event Effect under the coupling action of different working modes and extreme space environment. The transient current changes of each terminal are analyzed and compared after the ions striking on the device under different conditions. The results show that under different operating voltages, the degree of SEE damage is different in different extreme temperatures and different ion radiation environments, which is related to the ionization of carriers in different environments within the device.
2022, 20(9):897-902.
DOI: 10.11805/TKYDA2022003
Abstract:
In order to study the effect of H2 and H2O on the radiation effect of domestic bipolar devices, a typical gate-controlled bipolar transistor is designed, and the irradiation tests in different concentrations of H2 are carried out, as well as the total dose irradiation tests after the temperature and humidity tests. The results show that the anti-radiation ability of the device decreases gradually with the increase of hydrogen concentration. After the temperature and humidity test, the radiation damage of the device increases with the entry of H2O. On this basis, gate scanning method is employed to quantitatively separate the radiation-induced defects of the oxide layer. It is found that both H2 and H2O will cause the increase of the radiation-induced interface trap charge Nit after entering into the oxide layer. In addition, the potential mechanism of H2 and H2O induced damage enhancement is given by theoretical analysis. The research results are of great value to the evaluation of the anti-radiation performance of electronic systems in radiation environment.
In order to study the effect of H2 and H2O on the radiation effect of domestic bipolar devices, a typical gate-controlled bipolar transistor is designed, and the irradiation tests in different concentrations of H2 are carried out, as well as the total dose irradiation tests after the temperature and humidity tests. The results show that the anti-radiation ability of the device decreases gradually with the increase of hydrogen concentration. After the temperature and humidity test, the radiation damage of the device increases with the entry of H2O. On this basis, gate scanning method is employed to quantitatively separate the radiation-induced defects of the oxide layer. It is found that both H2 and H2O will cause the increase of the radiation-induced interface trap charge Nit after entering into the oxide layer. In addition, the potential mechanism of H2 and H2O induced damage enhancement is given by theoretical analysis. The research results are of great value to the evaluation of the anti-radiation performance of electronic systems in radiation environment.
2022, 20(9):877-883.
DOI: 10.11805/TKYDA2021440
Abstract:
Four types of NOR Flash memories from different manufacturers with 90 nm feature sizes are studied, based on the HI-13 accelerator of the China Academy of Atomic Energy. Aiming to evaluate the Single Event Upset(SEU) effect for those memories, heavy-ion with different Linear Energy Transfer(LET) values is utilized to irradiate the devices. Both static and dynamic tests are performed to obtain the SEU cross-section of the device. Test results show that the memory with large capacities has a slightly bigger SEU cross-section than the devices with small capacities. There is almost no impact on the SEU cross-section of the device with or without bias. The SEU cross-section of the domestic alternative devices is bigger than that of two foreign commercial devices. The LET threshold of the domestic alternative devices is nearly at 12.9 MeV·cm2/mg, while that value of foreign commercial devices between 12.9~32.5 MeV·cm2/mg. The SEU cross-section results from static and dynamic tests have good consistency, which indicates test mode has no obvious influence on SEU effect. In addition, the synergistic effects of Single Event Effect(SEE) and Total Ionizing Dose(TID) effect for Flash memory are also studied, the results show that TID dose will increase the sensitivity of the device to SEE. The analysis shows that the ionization caused by the TID effect leads to the electron leakage from the floating gate and the drift of transistor threshold voltage, therefore SEU is more likely to occur on the basis of TID effect.
Four types of NOR Flash memories from different manufacturers with 90 nm feature sizes are studied, based on the HI-13 accelerator of the China Academy of Atomic Energy. Aiming to evaluate the Single Event Upset(SEU) effect for those memories, heavy-ion with different Linear Energy Transfer(LET) values is utilized to irradiate the devices. Both static and dynamic tests are performed to obtain the SEU cross-section of the device. Test results show that the memory with large capacities has a slightly bigger SEU cross-section than the devices with small capacities. There is almost no impact on the SEU cross-section of the device with or without bias. The SEU cross-section of the domestic alternative devices is bigger than that of two foreign commercial devices. The LET threshold of the domestic alternative devices is nearly at 12.9 MeV·cm2/mg, while that value of foreign commercial devices between 12.9~32.5 MeV·cm2/mg. The SEU cross-section results from static and dynamic tests have good consistency, which indicates test mode has no obvious influence on SEU effect. In addition, the synergistic effects of Single Event Effect(SEE) and Total Ionizing Dose(TID) effect for Flash memory are also studied, the results show that TID dose will increase the sensitivity of the device to SEE. The analysis shows that the ionization caused by the TID effect leads to the electron leakage from the floating gate and the drift of transistor threshold voltage, therefore SEU is more likely to occur on the basis of TID effect.
2022, 20(9):908-914.
DOI: 10.11805/TKYDA2022008
Abstract:
The total ionizing dose effect of Silicon Carbide(SiC) Metal-Oxidel-Semiconductor Field Effect Transistor(MOSFET) at different temperatures is studied. Three SiC MOSFET devices manufactured at home and abroad are irradiated by 60Coγ ray. The radiation damage characteristics of threshold voltage, breakdown voltage, conduction resistance and leakage current are obtained at 25 ℃, 100 ℃ and 175 ℃, respectively. The degradation degree of the devices after irradiation at different temperatures are compared. The results show that the threshold voltage, static leakage current and sub-threshold characteristics of different devices are sensitive to ambient temperature, while the on-resistance and breakdown voltage are relatively insensitive. In addition, the sensitivity of the total ionizing response of SiC MOSFET to ambient temperature also varies with different manufacturers. It is found that the threshold voltage, static leakage and other parameters decrease with the increase of temperature due to the the tunneling annealing effect during high temperature irradiation.
The total ionizing dose effect of Silicon Carbide(SiC) Metal-Oxidel-Semiconductor Field Effect Transistor(MOSFET) at different temperatures is studied. Three SiC MOSFET devices manufactured at home and abroad are irradiated by 60Coγ ray. The radiation damage characteristics of threshold voltage, breakdown voltage, conduction resistance and leakage current are obtained at 25 ℃, 100 ℃ and 175 ℃, respectively. The degradation degree of the devices after irradiation at different temperatures are compared. The results show that the threshold voltage, static leakage current and sub-threshold characteristics of different devices are sensitive to ambient temperature, while the on-resistance and breakdown voltage are relatively insensitive. In addition, the sensitivity of the total ionizing response of SiC MOSFET to ambient temperature also varies with different manufacturers. It is found that the threshold voltage, static leakage and other parameters decrease with the increase of temperature due to the the tunneling annealing effect during high temperature irradiation.
2022, 20(9):922-926.
DOI: 10.11805/TKYDA2022010
Abstract:
GaN High-Electron-Mobility Transistors(HEMTs) devices bear the characteristics of high frequency resistance, high temperature resistance, high power and radiation resistance, which have broad application prospects in radiation environments such as nuclear reactors, cosmic detection and other radiation environments. Therefore, Stopping and Range of Ions in Matter(SRIM) is employed to simulate the effect of 1.8 MeV proton radiation on the conventional depletion device with different AlGaN barriers, and to observe the change law of vacancy density with depth. Under the optimal AlGaN barrier thickness, the MIS-HEMT devices of five different gate oxygen layer materials are simulated and compared. It is found that the material of Aluminum Nitride(AlN) gate oxygen layer bears relatively good radiation resistance.
GaN High-Electron-Mobility Transistors(HEMTs) devices bear the characteristics of high frequency resistance, high temperature resistance, high power and radiation resistance, which have broad application prospects in radiation environments such as nuclear reactors, cosmic detection and other radiation environments. Therefore, Stopping and Range of Ions in Matter(SRIM) is employed to simulate the effect of 1.8 MeV proton radiation on the conventional depletion device with different AlGaN barriers, and to observe the change law of vacancy density with depth. Under the optimal AlGaN barrier thickness, the MIS-HEMT devices of five different gate oxygen layer materials are simulated and compared. It is found that the material of Aluminum Nitride(AlN) gate oxygen layer bears relatively good radiation resistance.
2022, 20(9):884-896.
DOI: 10.11805/TKYDA2021444
Abstract:
Based on the sixth-generation 650 V SiC Junction Barrier Schottky(SiC JBS) diode and the third-generation 900 V Silicon Carbide Metal-Oxide Semiconductor Field-Effect-Transistor(SiC MOSFET), the single event effect, total dose effect and displacement damage effect of SiC power devices are studied. In the 20~80 MeV proton single event effect experiment, the Single Event Burnout (SEB) of SiC power device is accompanied by the generation of wave-shaped pulse current, and the breakdown characteristics of SEB devices are completely lost after irradiation. The accumulated proton fluence that induces SEB in SiC power devices decreases with the increase of bias voltage. In the single event effect simulation of SiC MOSFET, when heavy ions are incident on the device from the source, there exit a shorter SEB occurrence time and a lower SEB threshold voltage. The gate-source corner and the substrate-epitaxial layer junction are SEB sensitive regions of SiC MOSFET. The coexistence of strong electric field strength and high current density leads to excessive lattice temperature in the sensitive regions. When studying Co60 source total dose effect for SiC MOSFETs at gate bias (UGS=3 V, UDS=0 V), more serious electrical characteristics degradation occurs compared to at drain bias(UGS=0 V, UDS=300 V) and zero voltage bias (UGS=UDS=0 V). Using the middle-band voltage method, it is found that the vertical electric field in the oxide layer under gate bias increases the generation rate of trapped charges and exacerbates the degradation of threshold voltage. The neutron displacement damage leads to the reduction of forward and reverse currents in SiC JBS diodes. The neutron displacement damage effect experiments are carried out under the drain bias, and the electrical characteristics of SiC MOSFET are degraded the most significantly. This work provides a certain reference and support for the research on the radiation effect mechanism and radiation hardening of SiC devices for space application.
Based on the sixth-generation 650 V SiC Junction Barrier Schottky(SiC JBS) diode and the third-generation 900 V Silicon Carbide Metal-Oxide Semiconductor Field-Effect-Transistor(SiC MOSFET), the single event effect, total dose effect and displacement damage effect of SiC power devices are studied. In the 20~80 MeV proton single event effect experiment, the Single Event Burnout (SEB) of SiC power device is accompanied by the generation of wave-shaped pulse current, and the breakdown characteristics of SEB devices are completely lost after irradiation. The accumulated proton fluence that induces SEB in SiC power devices decreases with the increase of bias voltage. In the single event effect simulation of SiC MOSFET, when heavy ions are incident on the device from the source, there exit a shorter SEB occurrence time and a lower SEB threshold voltage. The gate-source corner and the substrate-epitaxial layer junction are SEB sensitive regions of SiC MOSFET. The coexistence of strong electric field strength and high current density leads to excessive lattice temperature in the sensitive regions. When studying Co60 source total dose effect for SiC MOSFETs at gate bias (UGS=3 V, UDS=0 V), more serious electrical characteristics degradation occurs compared to at drain bias(UGS=0 V, UDS=300 V) and zero voltage bias (UGS=UDS=0 V). Using the middle-band voltage method, it is found that the vertical electric field in the oxide layer under gate bias increases the generation rate of trapped charges and exacerbates the degradation of threshold voltage. The neutron displacement damage leads to the reduction of forward and reverse currents in SiC JBS diodes. The neutron displacement damage effect experiments are carried out under the drain bias, and the electrical characteristics of SiC MOSFET are degraded the most significantly. This work provides a certain reference and support for the research on the radiation effect mechanism and radiation hardening of SiC devices for space application.
